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詳細摘要： World's first commercially available PbGa2Se4 crystals!

詳細摘要： 無序介孔碳 Disordered Mesoporous制備方法：硬模板法合成比表面積（平方米/克）：600平均孔徑（納米）：50納米顆粒尺寸：1微米可逆容量（第...

詳細摘要： This item is currently out of stock. Please expect 4-6 weeks lead time.

詳細摘要： 氮摻雜有序介孔碳 N-Doped Mesoporous Carbon制備方法：硬模板氮摻雜的介孔碳 CMK-3平均尺寸：1 um碳/氮（原子）：4.3空間群：二...

詳細摘要： Similar to graphene and MoS?, VSe? is also layered material （layered transition ...

詳細摘要： First commercially available CoSe2 crystals. They are perfectly layered and samp...

詳細摘要： InSe （indium selenide） is the first commercially available InSe layered material...

詳細摘要： 單層氧化石墨烯乙醇溶液 Single Layer Graphene Oxide Ethanol Dispersion制備方法：改良的H法濃度為5mg/mL 10...

詳細摘要： In the bulk form SnSe has band-gap at around 0.9 eV （indirect） and 1.25 direct g...

詳細摘要： Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D...

詳細摘要： More than a decade of growth optimization in chemical vapor transport （CVT） as w...

詳細摘要： Unlike other sources, our GaSe crystals are best suited towards electronic and o...

詳細摘要： Our single crystal GeSe （Germanium selenide） crystals come with guaranteed optic...

詳細摘要： 單層石墨烯（進口） Single Layer Graphene高比表面積石墨烯制備方法：熱剝離還原與氫化還原BET比表面積（平方米/克）：400~1000電阻率...

詳細摘要： In2Se3 single crystals were grown using Physical vapor transport （PVT） as well a...

詳細摘要： Our MoSe2 crystals are grown using two different techniques through chemical vap...

詳細摘要： 100% environmentally stable metallic NbSe2 crystals: In the bulk form, niobium d...

詳細摘要： 高比表面積氧化石墨烯 High Surface Area Graphene Oxide制備方法：改良的H法高表面積氧化石墨烯直徑：1 ~ 5um厚度：0.8~1...

詳細摘要： Platinum diselenide （PtSe2） is a member of transition metal dichalcogenide （TMDC...

詳細摘要： Magnetic semiconductor ZnPSe3 has a monoclinic structure with the factor group C...