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詳細(xì)摘要： Niobium atoms are perfectly incorporated into ReS? matrix.

詳細(xì)摘要： Our MoWS2 alloys with the chemical formula MoxW（1-x）S2 crystals perfectly crysta...

詳細(xì)摘要： Rhenium atoms perfectly incorporated into MoS? matrix.

詳細(xì)摘要： Molybdenum atoms perfectly incorporated into ReS2 matrix.

詳細(xì)摘要： Niobium atoms are perfectly incorporated into ReS? matrix.

詳細(xì)摘要： Our newest class of material: Sb2xAs2（1-x）S3 comes in perfect 1:1:3 stoichiometr...

詳細(xì)摘要： Synthetic MoS2 crystals have been I2 （iodine） intercalated to achieve p-type dop...

詳細(xì)摘要： High purtiy WS2 crystals have been I2 （iodine） intercalated to achieve p-type do...

詳細(xì)摘要： Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly lumine...

詳細(xì)摘要： Tungsten disulfide （2H-WS2） crystals are extremely rare in nature and are less t...

詳細(xì)摘要： Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk ...

詳細(xì)摘要： Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk ...

詳細(xì)摘要： More than a decade of growth optimization in chemical vapor transport （CVT） as w...

詳細(xì)摘要： 100% environmentally stable metallic NbS2 （niobium disulfide） crystals: NbS2 dis...

詳細(xì)摘要： Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

詳細(xì)摘要： ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, ex...

詳細(xì)摘要： Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band ...

詳細(xì)摘要： NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's ma...

詳細(xì)摘要： 14 years of growth optimization in chemical vapor transport （CVT） as well as flu...

詳細(xì)摘要： Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly lumine...