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上海巨納科技有限公司>>二維材料>>硫化物晶體>>NbS2 二硫化鈮晶體 (Niobium Disulfide)

NbS2 二硫化鈮晶體 (Niobium Disulfide)

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  • NbS2 二硫化鈮晶體 (Niobium Disulfide)

  • NbS2 二硫化鈮晶體 (Niobium Disulfide)

  • NbS2 二硫化鈮晶體 (Niobium Disulfide)

  • NbS2 二硫化鈮晶體 (Niobium Disulfide)

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100% environmentally stable metallic NbS2 (niobium disulfide) crystals: NbS2 displays metallic and superconducting behavior.

詳細(xì)介紹

100% environmentally stable metallic NbS2 (niobium disulfide) crystals: NbS2 displays metallic and superconducting behavior. Undergoes superconducting transition at low temperatures and exhibits CDW behavior. Our NbS2 crystals are grown by two distinct methods as summarized below (CVT vs flux zone). Clean and defect free crystal growth enabled us to create the only commercially available NbS2 vdW crystals with guaranteed CDW and superconducting responses.

If your research needs atomically flat NbS2 samples for scanning tunneling microscopy (STM) measurements please contact us.

Properties of NbS2 crystals by 2Dsemiconductors USA

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.

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