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NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's ma...

14 years of growth optimization in chemical vapor transport (CVT) as well as flu...

Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly lumine...

QLED量子點(diǎn) 特制紅/綠/藍(lán)QLED量子點(diǎn)溶液濃度：~20mg/ml，溶劑：正辛烷（可定制不同溶劑、濃度）直接用于旋涂工藝 ZnMgO納米粒子 濃度：~30m...

ZnSe量子點(diǎn)是一種新型環(huán)?！熬G色"半導(dǎo)體納米材料，有效克服了Cd系量子點(diǎn)毒性大的缺點(diǎn)，作為寬帶隙半導(dǎo)體材料，ZnSe是制造藍(lán)綠波段半導(dǎo)體發(fā)光器件的重要材料。應(yīng)...

由于其激子波爾半徑比Ⅱ-Ⅵ族的大，量子限域效應(yīng)明顯，消光系數(shù)大，發(fā)射光譜頻率覆蓋整個(gè)可見光范圍，并延伸至近紅外區(qū)域，尤其是不含有重金屬元素，InP量子點(diǎn)在平板顯...

光學(xué)性能對(duì)粒子尺寸的依賴性是量子點(diǎn)*的和*吸引力的功能。例如，通過控制粒子的大小，CdSe量子點(diǎn)的發(fā)射光波長在整個(gè)可見光范圍內(nèi)連續(xù)可調(diào)。然而，二元素量子點(diǎn)，如C...

光學(xué)性能對(duì)粒子尺寸的依賴性是量子點(diǎn)*的和*吸引力的功能。例如，通過控制粒子的大小，CdSe量子點(diǎn)的發(fā)射光波長在整個(gè)可見光范圍內(nèi)連續(xù)可調(diào)。然而，二元素量子點(diǎn)，如C...

近紅外量子點(diǎn)具有玻爾半徑大、禁帶寬度小、能量轉(zhuǎn)換率較高等特點(diǎn)，在光電器件、通訊、發(fā)光二極管、太陽能電池等領(lǐng)域有著廣泛應(yīng)用。由于其發(fā)射的近紅外波長具有很強(qiáng)的組織穿...

轉(zhuǎn)換發(fā)光納米粒子主要是由氧化物、氟化物、鹵氧化物等基質(zhì)摻雜三價(jià)稀土離子（如Er3+ , Eu3+ , Yb3+ , Tm3+ , Ho3+ 等）得到，通過多光子...

Our TiS2 crystals are stabilized in 1T ohase (semimetallic phase). They are grow...

Single crystal ReS? (Rhenium disulfide) crystals are developed at our facilities...

14 years of growth optimization in chemical vapor transport (CVT) as well as flu...

Hafnium disulfide (HfS?) is an indirect gap layered semiconductor in the bulk an...

Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed...

More than a decade of growth optimization in chemical vapor transport (CVT) as w...

Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical...

The only commercially available TlGaS2 vdW crystals have been synthesized at our...

The only commercially available TlInS2 vdW crystals have been synthesized at our...

Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials. Our cry...